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DIGITAL AUDIO MOSFET
PD - 97252
Features

Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 300W per channel into 8 load in half-bridge configuration amplifier Lead-free package
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
IRFI4020H-117P Key Parameters g
200 80 19 6.8 3.0 150 V m: nC nC C
G1 S1/D2 G2 S2
D1
TO-220 Full-Pak 5 PIN
G1, G2 D1, D2 S1, S2
Gate
Drain
Source
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
Absolute Maximum Ratings
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C EAS TJ TSTG
g
Parameter
Max.
200 20 9.1 5.7 36 21 8.5 0.17 130 -55 to + 150
Units
V A
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
f f
c
W W/C mJ C
Linear Derating Factor Single Pulse Avalanche Energyd Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
300 10lbxin (1.1Nxm)
Thermal Resistance
RJC RJA
g
Junction-to-Case
f
Parameter
Typ. --- ---
Max. 5.9 65
Units C/W
Junction-to-Ambient (free air)
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08/22/06
IRFI4020H-117P
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
g
Conditions
VGS = 0V, ID = 250A
Min.
200 --- --- 3.0 --- --- --- --- --- 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 24 80 --- -12 --- --- --- --- --- 19 4.9 0.95 5.8 7.4 6.8 3.0 8.4 8.0 18 4.0 1240 130 28 110 4.5 7.5 --- --- 100 4.9 --- 20 250 100 -100 --- 29 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- nH --- ns
V
mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 5.5A
e
V VDS = VGS, ID = 100A mV/C A nA S VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 50V, ID = 5.5A VDS = 100V VGS = 10V ID = 5.5A See Fig. 6 and 15
nC
VDD = 100V, VGS = 10VAe ID = 5.5A RG = 2.4 VGS = 0V VDS = 25V = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 160V Between lead, 6mm (0.25in.) from package and center of die contact
G D
pF
S
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
g
Min.
--- --- --- --- ---
Typ. Max. Units
--- --- --- 76 230 9.1 A 36 1.3 110 350 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 5.5A, VGS = 0V TJ = 25C, IF = 5.5A, VDD = 160V di/dt = 100A/s
e
e
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 8.6mH, RG = 25, IAS = 5.5A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Specifications refer to single MosFET.
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IRFI4020H-117P
100
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V
100
TOP VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
6.0V
BOTTOM
10
BOTTOM
10 6.0V
1
60s PULSE WIDTH
Tj = 25C 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) 0.1 0.1 1
60s PULSE WIDTH
Tj = 150C 10 100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100 VDS = 50V 60s PULSE WIDTH T J = 150C
RDS(on) , Drain-to-Source On Resistance
Fig 2. Typical Output Characteristics
3.0 2.5 ID = 5.5A VGS = 10V
ID, Drain-to-Source Current (A)
10
2.0
(Normalized)
1.5
1
TJ = 25C
1.0
0.5
0.1 3 4 5 6 7
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 5.5A
VGS, Gate-to-Source Voltage (V)
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
10.0
C, Capacitance (pF)
1000
Ciss
VDS= 160V VDS= 100V VDS= 40V
8.0 6.0
Coss 100 Crss
4.0
2.0
10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0.0 0 5 10 15 20 25 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRFI4020H-117P
100
1000 100 10 1 0.1 0.01 0.001 Tc = 25C Tj = 150C Single Pulse 1 10 DC 1msec 10msec 100sec OPERATION IN THIS AREA LIMITED BY R DS(on)
T J = 150C 10
T J = 25C 1
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
0.0001 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
10
VGS(th) , Gate Threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
8
ID, Drain Current (A)
4.5
4.0 ID = 100A 3.5
6
4
3.0
2
2.5
0 25 50 75 100 125 150 T J , Junction Temperature (C)
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Junction Temperature
10 D = 0.50
Thermal Response ( Z thJC )
Fig 10. Threshold Voltage vs. Temperature
1
0.20 0.10 0.05
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
0.02 0.01
J
Ri (C/W) i (sec) 1.108 0.001041 2.172 2.621 0.148518 2.010100
1
2
0.01
Ci= i/Ri Ci= i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFI4020H-117P
RDS(on), Drain-to -Source On Resistance (m )
300
600
EAS , Single Pulse Avalanche Energy (mJ)
ID = 5.5A
275 250 225 200 175 150 125 100 75 50 5 6 7 8
500
ID 0.91A 1.1A BOTTOM 5.5A TOP
400
T J = 125C
300
200
T J = 25C
100
0
9 10
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13a. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 13b. Unclamped Inductive Test Circuit
LD VDS
Fig 13c. Unclamped Inductive Waveforms
VDS
90%
+
VDD D.U.T
10%
VGS Pulse Width < 1s Duty Factor < 0.1%
VGS
td(on) tr td(off) tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Id Vds Vgs
L VCC
0
DUT 1K
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b Gate Charge Waveform
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IRFI4020H-117P
TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117
(Dimensions are shown in millimeters (inches))
TO-220 Full-Pak 5-Pin Part Marking Information
AIR
TO-220AB Full-Pak 5-Pin package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2006
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